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ZXMP6A18DN8
Electrical Characteristics (@T A = +25°C , unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-60
?
?
?
?
?
?
-1
? 100
V
μA
nA
I D = -250μA, V GS = 0V
V DS = -60V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 12)
Forward Transconductance (Notes 12 & 14)
Diode Forward Voltage (Note 12)
Reverse Recovery Time (Note 14)
Reverse Recovery Charge (Note 14)
V GS(th)
R DS(ON)
g fs
V SD
t rr
Q rr
-1
?
?
?
?
?
?
?
8.7
-0.85
37
56
?
0.055
0.08
?
-0.95
?
?
V
?
S
V
ns
nC
I D = -250μA, V DS = V GS
V GS = -10V, I D = -3.5A
V GS = -4.5V, I D = -2.9A
V DS = -15V, I D = -3.5A
I S = -4.2A, V GS = 0V, T J = +25°C
I F = -2.1A, di/dt = 100A/μs, T J = +25°C
DYNAMIC CHARACTERISTICS (Note 14)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 13)
Total Gate Charge (Note 13)
C iss
C oss
C rss
Q g
Q g
?
?
?
??
?
1580
160
140
23
44
?
?
?
??
?
pF
pF
pF
nC
nC
V DS = -30V, V GS = 0V
f = 1MHz
V GS = -5V
V DS = -30V
Gate-Source Charge (Note 13)
Gate-Drain Charge (Note 13)
Turn-On Delay Time (Note 13)
Q gs
Q gd
t D(on)
?
?
?
3.9
9.8
4.6
?
?
?
nC
nC
ns
V GS = -10V
I D = -3.5A
Turn-On Rise Time (Note 13)
Turn-Off Delay Time (Note 13)
Turn-Off Fall Time (Note 13)
t r
t D(off)
t f
?
?
?
5.8
55
23
?
?
?
ns
ns
ns
V DD = -30V, V GS = -10V
I D = -1A, R G ? 6.0 ?
Notes:
12. Measured under pulsed conditions. Pulse width ? 300μs; duty cycle ? 2%
13. Switching characteristics are independent of operating junction temperatures.
14. For design aid only, not subject to production testing.
ZXMP6A18DN8
Document Number DS33592 Rev 2 - 2
4 of 8
www.diodes.com
October 2013
? Diodes Incorporated
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